Tag Archives: hexagonal boron nitride

Luminescence of hexagonal boron nitride explained

Luminescence of hexagonal boron nitride (hBN) has puzzled researchers for long time. In standard solid state physics textbooks direct band gap semiconductors are considered efficient light emitters while indirect ones are regarded as inefficient. Hexagonal boron nitride seems to defy this rule. In fact hBN emits light in the ultraviolet with an efficient comparable to… Read More

Exciton interference in hexagonal boron nitride

Our new paper on exciton interference in hexagonal boron nitride is online. In this paper we show  that the excitonic peak  at finite momentum is formed by the superposition of two groups of transitions that we call KM and MK′ from the k-points involved in the transitions. These two groups contribute to the peak intensity… Read More

Modeling excitons in bulk and single-layer hBN

New paper on excitations in hexagonal Boron-Nitride. Core and low energy electronic excitations have been studied in hexagonal boron nitride by means of angular resolved electron energy loss spectroscopy and theoretical calculations. Paper: Angular resolved electron energy loss spectroscopy in hexagonal boron nitride Poster: Modeling excitons in bulk and single-layer hBN